Strain-Dependent Splitting of the Double-Resonance Raman Scattering Band in Graphene

被引：293

作者：

Yoon, Duhee ^{[1
]}

Son, Young-Woo ^{[2
]}

Cheong, Hyeonsik ^{[1
]}

机构：

[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea

[2] Korea Inst Adv Study, Sch Computat Sci, Seoul 130722, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

SINGLE-LAYER; MONOLAYER;

D O I：

10.1103/PhysRevLett.106.155502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain. Through polarized micro-Raman measurements and first-principles calculations, the effects are shown to originate from significant changes in resonant conditions owing to both the distorted Dirac cones and anisotropic modifications of phonon dispersion under uniaxial strains. Quantitative agreements between the calculation and experiment enable us to determine the dominant double-resonance Raman scattering path, thereby answering a fundamental question concerning this key experimental analyzing tool for graphitic systems.

引用

页数：4

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