A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications

被引：75

作者：

Chun, Inwoo ^{[1
]}

Efremov, Alexander ^{[2
]}

Yeom, Geun Young ^{[3
]}

Kwon, Kwang-Ho ^{[1
]}

机构：

[1] Korea Univ, Dept Control & Instrumentat Engn, Sejong 339700, South Korea

[2] State Univ Chem & Technol, Dept Elect Devices & Mat Technol, Ivanovo 153000, Russia

[3] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

THIN SOLID FILMS | 2015年 / 579卷

关键词：

Tetrafluoromethane; Perfluorocyclobutane; Plasma diagnostics; Modeling; Reaction kinetics; Plasma modeling; INDUCTIVELY-COUPLED PLASMAS; MODEL-BASED ANALYSIS; PROBE MEASUREMENTS; DISCHARGES; KINETICS; DENSITY; SPECTROSCOPY; MECHANISM; CF4/O2; AR/CF4;

D O I：

10.1016/j.tsf.2015.02.060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the O-2/Ar mixing ratio in CF4/O-2/Ar and C4F8/O-2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O-2 results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：136 / 143

页数：8

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