Surface modification of SiO2 thin film using high-dose ion implantation technique as a suitable manufacturing process

We studied the surface modification of SiO2 films using high-dose ion implantation. The wet etching rate of HF solution can be precisely controlled by changing the various ion species. The etching rate increases with B+ and P+ implantation and decreases with C+, N+, O+ and Si+ implantation. In particular, the wet etching rate is greatly increased by P+ implantation and is hardly etched by C+ and Si+ implantation. We also demonstrated the selective etching process using a 3D structure sample. Selective etching can be realized in a self-aligned manner using ion implantation. This technique using ion implantation can be quite useful as a suitable production process for device fabrication. (C) 2020 The Japan Society of Applied Physics