Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)

被引:34
作者
Bonell, Frederic [1 ,2 ]
Cuxart, Marc G. [1 ,2 ,3 ]
Song, Kenan [1 ,2 ,3 ]
Robles, Roberto [1 ,2 ]
Ordejon, Pablo [1 ,2 ]
Roche, Stephan [1 ,2 ,4 ]
Mugarza, Aitor [1 ,2 ,4 ]
Valenzuela, Sergio O. [1 ,2 ,4 ]
机构
[1] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain
[2] Barcelona Inst Sci & Technol, Campus UAB, Barcelona 08193, Spain
[3] Univ Autonoma Barcelona, Bellaterra 08193, Spain
[4] ICREA, Barcelona 08070, Spain
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
MOLECULAR-BEAM EPITAXY; BI2SE3; THIN-FILMS; BI2TE3; STATES;
D O I
10.1021/acs.cgd.7b00525
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate the growth of twin-free Bi2Te3 and Sb2Te3 topological insulators by molecular beam epitaxy and a sizable reduction of the twin density in Bi2Se3 on lattice-matched BaF2(111) substrates. Using X-ray diffraction, electron diffraction and atomic force microscopy, we systematically investigate the parameters influencing the formation of twin domains and the morphology of the films, and show that Se- and Te-based alloys differ by their growth mechanism. Optimum growth parameters are shown to result in intrinsically low-doped films, as probed by angle-resolved photoelectron spectroscopy. In contrast to previous approaches in which twin-free Bi2Se3 films are achieved by increasing the substrate roughness, the quality of our Bi2Te3 is superior on the flattest BaF2 substrates. This finding indicates that, during nucleation, the films not only interact with the topmost substrate layer but also with buried layers that provide the necessary stacking information to promote a single twin, an observation that is supported by ab initio calculations.
引用
收藏
页码:4655 / 4660
页数:6
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