We demonstrate the growth of twin-free Bi2Te3 and Sb2Te3 topological insulators by molecular beam epitaxy and a sizable reduction of the twin density in Bi2Se3 on lattice-matched BaF2(111) substrates. Using X-ray diffraction, electron diffraction and atomic force microscopy, we systematically investigate the parameters influencing the formation of twin domains and the morphology of the films, and show that Se- and Te-based alloys differ by their growth mechanism. Optimum growth parameters are shown to result in intrinsically low-doped films, as probed by angle-resolved photoelectron spectroscopy. In contrast to previous approaches in which twin-free Bi2Se3 films are achieved by increasing the substrate roughness, the quality of our Bi2Te3 is superior on the flattest BaF2 substrates. This finding indicates that, during nucleation, the films not only interact with the topmost substrate layer but also with buried layers that provide the necessary stacking information to promote a single twin, an observation that is supported by ab initio calculations.
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页码:4655 / 4660
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[Anonymous], 2015, Topological Insulators: Fundamentals and Perspectives, DOI DOI 10.1002/9783527681594
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Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Chen, Xi
;
Ma, Xu-Cun
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Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Ma, Xu-Cun
;
He, Ke
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Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
He, Ke
;
Jia, Jin-Feng
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机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Jia, Jin-Feng
;
Xue, Qi-Kun
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机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Chen, Xi
;
Ma, Xu-Cun
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h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Ma, Xu-Cun
;
He, Ke
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
He, Ke
;
Jia, Jin-Feng
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h-index: 0
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Jia, Jin-Feng
;
Xue, Qi-Kun
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R ChinaTsinghua Univ, Dept Phys, Beijing 100084, Peoples R China