Photovoltaic properties of fullerene (C60) thin films

被引：0

作者：

Katz, EA ^{[1
]}

Faiman, D ^{[1
]}

Goren, S ^{[1
]}

Shtutina, S ^{[1
]}

Shames, A ^{[1
]}

Mishori, B ^{[1
]}

Shapira, Y ^{[1
]}

机构：

[1] Ben Gurion Univ Negev, Natl Solar Energy Ctr, IL-84990 Sede Boqer, Israel

来源：

THIN-FILM STRUCTURES FOR PHOTOVOLTAICS | 1998年 / 485卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The crystalline structure, Electron Paramagnetic Resonance and Surface Photovoltage (SPV) spectra of C-60 thin films and the photovoltaic properties of C-60/Ag and C-60/Si interfaces are reported. The SPV spectra of C-60 films, C-60/Ag and C-60/Si interfaces are presented and analyzed on the basis of a model of C-60 film electron structure including mobility gap, band tails extending into the gap and two deep level states in the gap. I-V characteristics of the C-60/Ag and the C-60/p-Si interfaces were measured. Both device structures are shown to exhibit rectifying behavior in the dark and photovoltaic properties. The solar cell parameters are presented.

引用

页码：113 / 118

页数：6