Electric-field control of magnetic domain wall motion and local magnetization reversal

被引:218
作者
Lahtinen, Tuomas H. E. [1 ]
Franke, Kevin J. A. [1 ]
van Dijken, Sebastiaan [1 ]
机构
[1] Aalto Univ, Sch Sci, Dept Appl Phys, FI-00076 Aalto, Finland
来源
SCIENTIFIC REPORTS | 2012年 / 2卷
基金
芬兰科学院;
关键词
EXCHANGE BIAS; FILMS;
D O I
10.1038/srep00258
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.
引用
收藏
页数:6
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