Drastic activation of dopant in Si film using ELA for high-performance TFT

被引：0

作者：

Noguchi, T. ^{[1
]}

Kawai, K. ^{[1
]}

Kakazu, J. ^{[1
]}

Kinjo, E. ^{[1
]}

Nakamura, R. ^{[1
]}

Miyahira, T. ^{[1
]}

Suzuki, T. ^{[2
]}

Sato, M. ^{[2
]}

机构：

[1] Univ Ryukyus, Dept Elect & Elect Engn, Okinawa 9030213, Japan

[2] SEN, Tokyo, Japan

来源：

IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

After UV pulsed excimer laser annealing for highly boron-, or phosphorus dosed Si film, the relationship between the conductivity and the correlating crystallinity in the film was analyzed. The crystallinity and its internal stress were analyzed by using S.E. (Spectroscopic Ellipsometry) or by Raman scattering, respectively, for the poly-crystallized Si film. As a result, the sheet resistance decreased with improving the crystallinity. By adopting and optimizing the excimer laser annealing, efficient solidified activation after melting occurs, the Si film of 50 nm thickness shows extremely low sheet resistance below 90 ohm/sq. for the dose of 2E15 cm(-2). Even for p-typed case, extremely low sheet resistance as low as 50 ohm/sq. was obtained for a B+ dose of 5e15 cm(-2). Clear tensile stress was observed similar to the case of ELC (Excimer Laser Crystallization) for un-doped Si film. ELA activation subsequently after ion implantation is considered to be effective to the formation of source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode for SoP (System on Panel) application.

引用

页码：1885 / +

页数：3

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