Enhanced Electrical Properties of Carbon Doped Epitaxial Gd2O3 Thin Films on Si Substrates

被引：2

作者：

Laha, Apurba ^{[1
]}

Bin, A. ^{[2
]}

Babu, P. R. P. ^{[1
,3
]}

Fissel, A. ^{[4
]}

Osten, H. J. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, Schneiderberg 32, D-30167 Hannover, Germany

[2] Sun Yat Sen Univ, Inst Solar Ener Syst, State Key Lab Optelect Mat & Technol, Guangzhou 510006, Peoples R China

[3] VIT, Sch Elect Engn, Vellore, Tamil Nadu, India

[4] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 9 | 2011年 / 41卷 / 03期

关键词：

OXIDE;

D O I：

10.1149/1.3633025

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The impact of carbon doping on electrical properties of epitaxial Gd2O3 grown on Si substrates has been studied. The doping with low concentration of carbon into epitaxial Gd2O3 shows strong influence on dielectric properties especially to the reduction of leakage current behavior. The structural quality of the oxide layer is merely influenced by small amount of carbon incorporation. The most critical observation of this study is that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature could be eliminated by moderate amount of carbon doping during growth.

引用

页码：101 / 107

页数：7

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