Structure Change Induced by Terminal Sulfur in Noncentrosymmetric La2Ga2GeS8 and Eu2Ga2GeS7 and Nonlinear-Optical Responses in Middle Infrared

被引：71

作者：

Chen, Mei-Chun ^{[1
,2
]}

Li, Peng ^{[1
]}

Zhou, Liu-Jiang ^{[1
,2
]}

Li, Long-Hua ^{[1
]}

Chen, Ling ^{[1
]}

机构：

[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China

来源：

INORGANIC CHEMISTRY | 2011年 / 50卷 / 24期

基金：

中国国家自然科学基金;

关键词：

CRYSTAL-STRUCTURE; CHALCOGENIDES; DAMAGE; GA; GE;

D O I：

10.1021/ic2020513

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Two new noncentrosymmetric quaternary sulfides, La2Ga2GeS8 (1) and Eu2Ga2GeS7 (2), have been synthesized by high-temperature solid-state reactions. The structure change on going from 1 to 2 to the known Li2Ga2GeS6 (3) nicely shows that the reduced cation charge-compensation requirement causes a decrease in the number of terminal S atoms per formula, which is a key to determining the connectivity of the GaS4 and GeS4 building units. Powder sample 2 exhibits a strong second-harmonic-generation (SHG) response of about 1.6 times the benchmark AgGaS2 at 2.05 mu m laser radiation, a non type I phase-matchable behavior, and a comparable transparency region. The SHG intensities of these compounds originate from the electronic transitions from S 3p states to La/Eu/Li-S, Ga-S, and Ge-S antibonding states according to Vienna ab initio simulation package studies.

引用

页码：12402 / 12404

页数：3

共 19 条

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