Stress analysis, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

被引：13

作者：

Annadurai, A. ^{[2
]}

Raja, M. Manivel ^{[1
]}

Prabahar, K. ^{[1
]}

Kumar, Atul ^{[1
]}

Kannan, M. D. ^{[2
]}

Jayakumar, S. ^{[2
]}

机构：

[1] Def Met Res Lab, Hyderabad 500058, Andhra Pradesh, India

[2] PSG Coll Technol, Dept Phys, Coimbatore 641004, Tamil Nadu, India

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2011年 / 323卷 / 22期

关键词：

Ni-Mn-Ga thin film; Ferromagnetic shape memory material; Residual stress; Magnetic property; RESIDUAL-STRESS; TRANSFORMATION CHARACTERISTICS; MARTENSITIC-TRANSFORMATION;

D O I：

10.1016/j.jmmm.2011.06.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The residual stress instituted in Ni-Mn-Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni-Mn-Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 degrees C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm(3) and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2797 / 2801

页数：5

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