AlGaN/GaN lateral polarity heterostructures

被引：0

作者：

Lima, AP ^{[1
]}

Miskys, C ^{[1
]}

Ambacher, O ^{[1
]}

Stutzmann, M ^{[1
]}

Dimitrov, P ^{[1
]}

Tilak, V ^{[1
]}

Murphy, MJ ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN heterostructures v,,ere grown by Plasma Induced Molecular Beam Epitaxy on patterned AIN thin nucleation layers deposited on c-plane sapphire substrates. It is shown, by the localization of the 2DEG, that the heterostructures grown in the region covered by the AIN are Ga-face and the heterostructures grown directly on sapphire are N-face. This provides the new possibility to obtain lateral polarity heterostructures.

引用

页码：303 / 304

页数：2

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