Crystallization Mechanisms of Phase Change (GeSbSn)100-xCox Optical Recording Films

被引：2

作者：

Ou, S. L. ^{[1
]}

Kuo, P. C. ^{[1
]}

Ma, S. H. ^{[1
]}

Shen, C. L. ^{[1
]}

Tsai, T. L. ^{[1
]}

Chen, S. C. ^{[2
]}

Chiang, D. Y. ^{[3
]}

Lee, C. T. ^{[3
]}

机构：

[1] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 10617, Taiwan

[2] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan

[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 12期

关键词：

(GeSbSn)(100-x)Co-x Films; Crystallization Activation Energy; Microstructure; LASER-INDUCED CRYSTALLIZATION; SPEED; SB; ALLOYS; MEDIA; DISK;

D O I：

10.1166/jnn.2011.4005

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, the (GeSbSn)(100-x)Co-x films (x = 0 similar to 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The ZnS-SiO2 films were used as protective layers. The thicknesses of the (GeSbSn)(100-x)Co-x films and protective layer were 100 nm and 30 nm, respectively. We investigated the effects of Co addition on the thermal property, crystallization kinetics, and crystallization mechanism of the GeSbSn recording film. The crystallization temperatures of (GeSbSn)(100-x)Co-x films were decreased with Co content. It was found that the activation energy of the (GeSbSn)(100-x)Co-x films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.

引用

页码：11138 / 11141

页数：4

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