Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations

被引：0

作者：

Lucci, L ^{[1
]}

Esseni, D ^{[1
]}

Loo, J ^{[1
]}

Ponomarev, Y ^{[1
]}

Selmi, L ^{[1
]}

Abramo, A ^{[1
]}

Sangiorgio, E ^{[1
]}

机构：

[1] DIEGM, I-33100 Udine, Italy

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper we report measurements of electron effective mobility (mu(eff)) in Ultra-Thin-(UT) pure SiO2 bulk MOSFETs. A low substrate doping was intentionally used to better detect a possible mu(eff) degradation at small T-ox. New quantitative criteria were developed and used to obtain mu(eff) measurements unaffected by either gate doping penetration or gate oxide leakage. Mobility simulations based on an improved and comprehensive Remote Coulomb Scattering (RCS) model exhibit a good agreement with the experimentally observed mobility reduction at small T-ox. Our results indicate that the Polysilicon Screening is an essential ingredient to reconcile the RCS models with the experiments.

引用

页码：463 / 466

页数：4