Quantum Hall-like effect in gated four-terminal graphene devices without magnetic field

被引:21
作者
Yang, Mou [1 ]
Ran, Xian-Jin [1 ]
Cui, Yan [1 ]
Wang, Rui-Qiang [1 ]
机构
[1] S China Normal Univ, Sch Phys & Telecommun Engn, Lab Quantum Informat Technol, Guangzhou 510006, Guangdong, Peoples R China
关键词
Fermi level; graphene; magnetic fields; quantum Hall effect; P-N-JUNCTION;
D O I
10.1063/1.3663625
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the transport properties of a four-terminal graphene device of which two terminals are beneath a pair of reversal top gate voltages. We find there exists quantum Hall-like effect without magnetic field applied. The curve of Hall conductance versus the Fermi energy shows steps, and the disorder can make the steps clearer. The average length of Hall conductance plateaus is of the order meV for the devices with the terminal widths of the order mu m, which is within the scope of the experimental observation. The influences of gate voltage, device dimensions, and dispersion gap are also discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663625]
引用
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页数:3
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共 29 条
  • [12] LAUPHLIN RB, 1981, PHYS REV B, V23, P5632
  • [13] Transport length scales in disordered graphene-based materials: Strong localization regimes and dimensionality effects
    Lherbier, Aurelien
    Biel, Blanca
    Niquet, Yann-Michel
    Roche, Stephan
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (03)
  • [14] Fabrication of graphene p-n-p junctions with contactless top gates
    Liu, Gang
    Velasco, Jairo, Jr.
    Bao, Wenzhong
    Lau, Chun Ning
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (20)
  • [15] Disorder-Induced Enhancement of Transport through Graphene p-n Junctions
    Long, Wen
    Sun, Qing-feng
    Wang, Jian
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (16)
  • [16] Electronic transport properties of a tilted graphene p-n junction
    Low, Tony
    Appenzeller, Joerg
    [J]. PHYSICAL REVIEW B, 2009, 80 (15)
  • [17] Novel electric field effects on Landau levels in graphene
    Lukose, Vinu
    Shankar, R.
    Baskaran, G.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (11)
  • [18] Pseudospin polarized quantum transport in monolayer graphene
    Majidi, Leyla
    Zareyan, Malek
    [J]. PHYSICAL REVIEW B, 2011, 83 (11)
  • [19] Tunable stress and controlled thickness modification in graphene by annealing
    Ni, Zhen Hula
    Wang, Hao Min
    Ma, Yun
    Kasim, Johnson
    Wu, Yi Hong
    Shen, Ze Xiang
    [J]. ACS NANO, 2008, 2 (05) : 1033 - 1039
  • [20] Room-temperature quantum hall effect in graphene
    Novoselov, K. S.
    Jiang, Z.
    Zhang, Y.
    Morozov, S. V.
    Stormer, H. L.
    Zeitler, U.
    Maan, J. C.
    Boebinger, G. S.
    Kim, P.
    Geim, A. K.
    [J]. SCIENCE, 2007, 315 (5817) : 1379 - 1379