Improved performance of perovskite light-emitting device with urea modified PEDOT:PSS hole transport layer

被引：7
作者：
Fan, Ruiting [1 ]
Song, Li [1 ]
Tang, Zhaobing [2 ]
Jia, Kuifeng [1 ]
Huang, Lixin [1 ]
Bi, Wengang [1 ]
机构：
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin Key Lab Elect Mat & Devices, 5340 Xiping Rd, Tianjin 300401, Peoples R China
[2] Hisense Visual Technol CO Ltd, Qingdao, Peoples R China
来源：
MATERIALS LETTERS | 2020年 / 272卷
基金：
中国博士后科学基金;
关键词：
CsPbBr3; Luminescence; Multilayer structure; Urea; Doping; DIODES;
D O I：
10.1016/j.matlet.2020.127878
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Efficient perovskite light-emitting devices (PeLEDs) was obtained by tailoring hole transport layer (HTL) PEDOT:PSS with urea. The urea-modulated PEDOT:PSS exhibited better conductivity and deeper work function (WF) compared with the neat PEDOT:PSS, enabling efficient charge injection from the HTL to the perovskite emission layer. The luminescent quenching resulted from the interfacial defects was also effectively suppressed. Such merits consequently result in reduced turn on voltage, promoted brightness, improved current efficiency (CE) and corresponding external quantum efficiency (EQE). By further passivating the bulk defects in the CsPbBr3 films by polyethylene glycol (PEG), a maximum brightness of 26487 cd/m(2), a peak CE of 16.68 cd/A and a maximum EQE of 4.84% were achieved. (C) 2020 Elsevier B.V. All rights reserved.
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页数：5
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