AlGaN/GaN HEMT based liquid sensors

被引：59
作者：
Mehandru, R
Luo, B
Kang, BS
Kim, J
Ren, F
Pearton, SJ
Pan, CC
Chen, GT
Chyi, JI
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 02期
基金：
美国国家科学基金会; 美国国家航空航天局;
关键词：
D O I：
10.1016/S0038-1101(03)00318-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：351 / 353
页数：3
相关论文
共 24 条
[1]  
AMBACHER O, 2002, P ECS, V214, P27
[2]   Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].
Binari, SC ;
Ikossi, K ;
Roussos, JA ;
Kruppa, W ;
Park, D ;
Dietrich, HB ;
Koleske, DD ;
Wickenden, AE ;
Henry, RL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471
[3]   Trapping effects in GaN and SiC microwave FETs [J].
Binari, SC ;
Klein, PB ;
Kazior, TE .
PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1048-1058
[4]   Current instabilities in GaN-based devices [J].
Daumiller, I ;
Theron, D ;
Gaquière, C ;
Vescan, A ;
Dietrich, R ;
Wieszt, A ;
Leier, H ;
Vetury, R ;
Mishra, UK ;
Smorchkova, IP ;
Keller, S ;
Nguyen, NX ;
Nguyen, C ;
Kohn, E .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) :62-64
[5]  
Eickhoff M, 2001, PHYS STATUS SOLIDI B, V228, P519, DOI 10.1002/1521-3951(200111)228:2<519::AID-PSSB519>3.0.CO
[6]  
2-A
[7]   The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].
Green, BM ;
Chu, KK ;
Chumbes, EM ;
Smart, JA ;
Shealy, JR ;
Eastman, LF .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270
[8]   State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs [J].
Lee, C ;
Wang, H ;
Yang, J ;
Witkowski, L ;
Muir, M ;
Khan, MA ;
Saunier, P .
ELECTRONICS LETTERS, 2002, 38 (16) :924-925
[9]   Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors [J].
Luo, B ;
Johnson, JW ;
Kim, J ;
Mehandru, RM ;
Ren, F ;
Gila, BP ;
Onstine, AH ;
Abernathy, CR ;
Pearton, SJ ;
Baca, AG ;
Briggs, RD ;
Shul, RJ ;
Monier, C ;
Han, J .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1661-1663
[10]   AlGaN/GaN HEMTs - An overview of device operation and applications [J].
Mishra, UK ;
Parikh, P ;
Wu, YF .
PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1022-1031
123