AlGaN/GaN HEMT based liquid sensors

被引：58
|
作者：
Mehandru, R
Luo, B
Kang, BS
Kim, J
Ren, F
Pearton, SJ
Pan, CC
Chen, GT
Chyi, JI
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 02期
基金：
美国国家航空航天局; 美国国家科学基金会;
关键词：
D O I：
10.1016/S0038-1101(03)00318-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：351 / 353
页数：3
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