Removal of boron from metallurgical grade silicon by electromagnetic induction slag melting

被引：55

作者：

Luo Da-wei ^{[1
]}

Liu Ning ^{[1
]}

Lu Yi-ping ^{[1
]}

Zhang Guo-liang ^{[1
]}

Li Ting-ju ^{[1
,2
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China

来源：

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA | 2011年 / 21卷 / 05期

基金：

中国国家自然科学基金;

关键词：

metallurgical grade silicon; slag system; partition ratio; POLYCRYSTALLINE SILICON;

D O I：

10.1016/S1003-6326(11)60840-6

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

A new purification process was developed to remove impurities in metallurgical grade silicon (MG-Si) by electromagnetic induction slag melting (EISM). Vacuum melting furnace was used to purify boron in different slag systems. The results show that the removal effect in SiO2-CaO-Al2O3 systems is better than that in other slag systems by EISM. The boron content in MG-Si is successfully reduced from 1.5x10(-5) to 0.2x10(-5) during EISM at 1 823 K for 2 h. Meanwhile, Al, Ca and Mg elements in MG-Si are also well removed and their removal efficiencies reach 85.0%, 50.2% and 66.7%, respectively, which indicates that EISM is very effective to remove boron and metal impurities in silicon.

引用

页码：1178 / 1184

页数：7

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