An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication

被引:10
作者
Nii, H [1 ]
Yoshino, C
Yoshitomi, S
Inoh, K
Furuya, H
Nakajima, K
Sugaya, H
Naruse, H
Katsumata, Y
Iwai, H
机构
[1] Toshiba Co Ltd, Microelect Engn Lab, Kawasaki, Kanagawa 2108582, Japan
[2] Toshiba Co Ltd, Semicond Grp, Kawasaki, Kanagawa 2108582, Japan
关键词
base; BICMOS; bipolar; epitaxy; high-frequency;
D O I
10.1109/16.753705
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an 0.3-mu m BiCMOS technology for mixed analog/digital application is presented. A typical emitter area of this technology is 0.3 mu m x 1.0 mu m. This technology includes high f(max) of 37 GHz at the low collector current of 300 mu A and high BV(ceo) of 10 V NPN transistor, CMOS with L(eff) = 0.3 mu m, and passive elements. By using the shallow and deep trench isolation technology and nonselective epitaxial intrinsic base, the C(jc) can be reduced to 1.6 fF, which is the lowest value reported so far. As a results, we have managed to obtain the high f(max) at the low current region and high BV(ceo) concurrently. These features will contribute to the development of highperformance BiCMOS LSI's for various mixed analog/digital applications.
引用
收藏
页码:712 / 721
页数:10
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