Optical properties of yellow light-emitting diodes grown on semipolar (11(2)over-bar2) bulk GaN substrates

被引：155

作者：

Sato, Hitoshi ^{[1
]}

Chung, Roy B.

Hirasawa, Hirohiko

Fellows, Natalie

Masui, Hisashi

Wu, Feng

Saito, Makoto

Fujito, Kenji ^{[2
]}

Speck, James S.

DenBaars, Steven P.

Nakamura, Shuji

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Mitsubishi Chem Corp, Optoelect Lab, Ushi Ku, Ibaraki 3001295, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

关键词：

D O I：

10.1063/1.2938062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (11 (2) over bar2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200 mA under pulsed operation (10% duty cycle) were 5.9 mW, 13.4% and 29.2 mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs. (C) 2008 American Institute of Physics.

引用

页数：3

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