First-principles study of water adsorption on α-SiO2 [110] surface

被引:16
|
作者
Mankad, Venu [1 ]
Jha, Prafulla K. [2 ]
机构
[1] MK Bhavnagar Univ, Dept Phys, Bhavnagar 364001, Gujarat, India
[2] Maharaja Sayajirao Univ Baroda, Fac Sci, Dept Phys, Vadodara 390002, Gujarat, India
关键词
INITIO MOLECULAR-DYNAMICS; SILICA SURFACES; HYDROPHOBIC SURFACES;
D O I
10.1063/1.4960455
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have investigated the structural and electronic properties of water molecule adsorbed silicon dioxide (alpha-SiO2) [110] surface and analyzed the influence of water molecule on its energetics, structure and elctronic propertes using density functional theory based first principles calculations. The inhomogeneous topology of the alpha-SiO2 clean surface promotes a total charge density displacement on the adsorbed water molecule and giving rise to electron-rich as well as hole-rich region. The electronic charge transfer from a alpha-SiO2 to the water molecule occurs upon the formation of a partially occupied level laying above conduction band level. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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页数:8
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