Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors

被引：135

作者：

Gu, Jianting ^{[1
,2
]}

Han, Jie ^{[1
]}

Liu, Dan ^{[3
]}

Yu, Xiaoqin ^{[1
]}

Kang, Lixing ^{[1
,2
]}

Qiu, Song ^{[1
]}

Jin, Hehua ^{[1
]}

Li, Hongbo ^{[1
]}

Li, Qingwen ^{[1
]}

Zhang, Jin ^{[3
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem,Beijing Natl Lab Mol Sci, Key Lab Phys & Chem Nanodevices,State Key Lab Str, Beijing 100871, Peoples R China

来源：

SMALL | 2016年 / 12卷 / 36期

基金：

中国国家自然科学基金;

关键词：

WALLED CARBON NANOTUBES; FIELD-EFFECT TRANSISTORS; LARGE-DIAMETER; SELECTIVE DISPERSION; PREFERENTIAL GROWTH; INTEGRATED-CIRCUITS; CONJUGATED POLYMERS; LOW-COST; DENSITY; EXTRACTION;

D O I：

10.1002/smll.201600398

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：4993 / 4999

页数：7

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