Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

被引:29
作者
Devika, M. [1 ]
Reddy, N. Koteeswara [1 ,2 ]
Gunasekhar, K. R. [2 ]
机构
[1] GIST, Dept Nanobiomat & Elect, Kwangju 500712, South Korea
[2] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
关键词
IV-VI compounds; Tin sulfide; Nanocrystalline films; Ultra-thin films; Surface morphology; Electrical properties; Optical properties; PULSED-LASER DEPOSITION; PHYSICAL-PROPERTIES; AQUEOUS-SOLUTION; SPRAY-PYROLYSIS; ELECTRODEPOSITION; NANOPARTICLES; TEMPERATURE; FABRICATION;
D O I
10.1016/j.tsf.2011.07.074
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:628 / 632
页数:5
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