Sensor Properties of Structures with Porous Silicon Layer

被引：2

作者：

Mkhitaryan, Z. H. ^{[1
]}

Aroutiounian, V. M. ^{[1
]}

Geghamyan, Sh. A. ^{[1
]}

机构：

[1] Yerevan State Univ, Yerevan 375049, Armenia

来源：

JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2011年 / 46卷 / 03期

关键词：

porous silicon; sensor; gas; CVC; noise; LOW-FREQUENCY NOISE;

D O I：

10.3103/S1068337211030091

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have measured at room temperature current-voltage and noise characteristics of structures with a porous silicon (porosity 80%) layer at adsorption of gases ammonia, propane and butane mixture, and ethyl alcohol vapor. It was obtained that the largest change in CVC and low-frequency noise is observed under action of ammonia gas on the structure. Physical reasons of sensor properties of studied samples are discussed.

引用

页码：135 / 139

页数：5

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