Enhanced Flexible Piezoelectric Sensor by the Integration of P(VDF-TrFE)/AgNWs Film With a-IGZO TFT

被引:42
作者
Zhang, Zhihan [1 ]
Chen, Longlong [1 ]
Yang, Xiang [1 ]
Li, Tongkuai [1 ]
Chen, Xin [1 ]
Li, Xifeng [1 ]
Zhao, Tingting [1 ]
Zhang, Jianhua [1 ]
机构
[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
关键词
a-IGZO TFT; array production; flexible pressure sensor; P(VDF-TrFE)/AgNWs; BEHAVIOR;
D O I
10.1109/LED.2018.2881983
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Flexible pressure sensors are important components in the future rollable touch screens, health care devices, electronic skins, and more. However, large-area array pressure sensors with small-size, good sensitivity, and the ability of detecting high-frequency dynamic force remain the key challenges for their practical applications. In this letter, we proposed a novel flexible piezoelectric pressure sensor system combined with a P(VDF-TrFE)/AgNWs thin film and an a-IGZO TFT. The doping of AgNWs into the P(VDF-TrFE) can improve the piezoelectric performance of P(VDF-TrFE) without high-voltage polarization and pressure stretching process, which are harmful to the performance of the TFT. With the combination of the a-IGZO TFT, this pressure sensor can be arrayed 4 x 4 in an active-matrix design with a dynamic force detecting ability (a response of 1100 mV/N), exhibiting good flexibility, fast response speed, high amplification, and lower energy consumption.
引用
收藏
页码:111 / 114
页数:4
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