Remarkable increase in the channel mobility of SiC-MOSFETs by controlling the interfacial SiO2 layer between Al2O3 and SiC

被引：64

作者：

Hatayama, Tomohiro ^{[1
]}

Hino, Shiro ^{[2
]}

Miura, Naruhisa ^{[3
]}

Oomori, Tatsuo ^{[3
]}

Tokumitsu, Eisuke ^{[2
]}

机构：

[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Yokohama, Kanagawa 2268503, Japan

[3] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

aluminum oxide; MOSFETs; power MOSFETs; silicon carbide;

D O I：

10.1109/TED.2008.926647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of a thin SiO(2) layer inserted between Al(2)O(3) and SiC on channel mobility in Al(2)O(3)/SiC MOSFETs was investigated. The remarkable increase in the channel mobility is demonstrated when the SiO(2) thickness is around 1 nm. The thin SiO(2) layer is formed by the thermal oxidation of the SiC substrate at 600 or 800 degrees C in O(2) atmosphere. The peak value of the field-effect mobility in Al(2)O(3)/SiO(2)/SiC MOSFETs is as high as 300 cm(2)/(V center dot s). On the other hand, when the SiO(2) layer is 2.0 nm, the field-effect mobility drastically reduces to 40 cm(2)/(V center dot s), which is most likely due to the high interface trap density as seen in conventional SiO(2)/SiC MOSFETs.

引用

页码：2041 / 2045

页数：5

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