Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates

被引：2
作者：
Huang, Huei-Min [1 ,2 ]
Lu, Tien-Chang [1 ,2 ]
Chang, Chiao-Yun [1 ,2 ]
Lan, Yu-Pin [1 ,2 ]
Ling, Shih-Chun [1 ,2 ]
Chan, Wei-Wen [1 ,2 ]
Kuo, Hao-Chung [1 ,2 ]
Wang, Shing-Chung [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electro Opt Engn, Hsinchu 300, Taiwan
来源：
GALLIUM NITRIDE MATERIALS AND DEVICES VII | 2012年 / 8262卷
关键词：
Non-polar; InGaN/GaN MQWs; optical polarization; strain; LIGHT-EMITTING-DIODES; GAN; FILMS;
D O I：
10.1117/12.906635
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73x10(-2) to 2.58x10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
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页数：6
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