Novel field emitter array technology for subhalf-micron diameter gates

被引：1

作者：

Yoshiki, M ^{[1
]}

Furutake, N

Takemura, H

Okamoto, A

Miyano, S

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Sagamihara, Kanagawa 2291198, Japan

[2] NEC Corp Ltd, Elect Component Dev Div, Sagamihara, Kanagawa 2291198, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 02期

关键词：

D O I：

10.1116/1.590595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully developed a novel field emitter array (FEA) technology with low leakage current between each emitter and its subhalf-micron diameter gate. The device has two features: (1) a locally oxidized layer and (2) an additional Si3N4 layer as a second insulator layer. In a fabricated FEA with a 0.38-mu m-diam gate, the insulator thickness was 0.26 mu m, two times thicker than that of the conventional structure, and the creeping distance was ten times longer. Its emission. threshold voltage is 32 V, and its leakage current has been reduced to less than a tenth of previous levels. (C) 1999 American Vacuum Society. [S0734-211X(99)05602-4].

引用

页码：567 / 569

页数：3

共 16 条

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