Foundations of physical vapor deposition with plasma assistance

被引:69
作者
Gudmundsson, Jon Tomas [1 ,2 ]
Anders, Andre [3 ,4 ]
von Keudell, Achim [5 ]
机构
[1] KTH Royal Inst Technol, Space & Plasma Phys, Sch Elect Engn & Comp Sci, SE-10044 Stockholm, Sweden
[2] Univ Iceland, Sci Inst, Dunhaga 3, IS-107 Reykjavik, Iceland
[3] Leibniz Inst Surface Engn IOM, Permoserstr 15, D-04318 Leipzig, Germany
[4] Univ Leipzig, Felix Bloch Inst Solid State Phys, Linnestr 5, D-04103 Leipzig, Germany
[5] Ruhr Univ Bochum, Inst Expt Phys 2, Bochum, Germany
关键词
physical vapor deposition; magnetron sputtering; cathodic arc deposition; ion beam deposition; sputtering; pulsed laser deposition; VACUUM-ARC; THIN-FILMS; ANGULAR-DISTRIBUTIONS; SPUTTER-DEPOSITION; VELOCITY DISTRIBUTION; CHARGED-PARTICLE; CURRENT-DENSITY; CATHODE SPOTS; TARGET POWER; GAS-PRESSURE;
D O I
10.1088/1361-6595/ac7f53
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Physical vapor deposition (PVD) refers to the removal of atoms from a solid or a liquid by physical means, followed by deposition of those atoms on a nearby surface to form a thin film or coating. Various approaches and techniques are applied to release the atoms including thermal evaporation, electron beam evaporation, ion-driven sputtering, laser ablation, and cathodic arc-based emission. Some of the approaches are based on a plasma discharge, while in other cases the atoms composing the vapor are ionized either due to the release of the film-forming species or they are ionized intentionally afterward. Here, a brief overview of the various PVD techniques is given, while the emphasis is on sputtering, which is dominated by magnetron sputtering, the most widely used technique for deposition of both metallic and compound thin films. The advantages and drawbacks of the various techniques are discussed and compared.
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页数:33
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