Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

被引：12
作者：
Sugaya, T
Ogura, M
Sugiyama, Y
Shimizu, T
Yonei, K
Jang, KY
Bird, JP
Ferry, DK
机构：
[1] AIST, Tsukuba, Ibaraki 3058568, Japan
[2] JST, CREST, Tsukuba, Ibaraki 3058568, Japan
[3] Shibaura Inst Technol, Minato Ku, Tokyo 1088548, Japan
[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[5] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[6] JST, Kawaguchi 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 03期
关键词：
D O I：
10.1063/1.1385344
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ridge-type InGaAs/InAlAs quantum-wire field-effect transistors are realized by selective molecular-beam epitaxy and their transport characteristics are studied. An analysis of the depopulation of one-dimensional subbands in these structures reveals little evidence for sidewall depletion, and yields an estimate for the carrier density in good agreement with that found in two-dimensional InGaAs/InAlAs heterojunctions. Subband splittings as large as 7.4 meV are obtained in the wires, indicating their excellent one-dimensional transport properties. (C) 2001 American Institute of Physics.
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收藏
页码：371 / 373
页数：3
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