Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature

被引:13
|
作者
Westphaling, R
Ullrich, P
Hoffmann, J
Kalt, H
Klingshirn, C
Ohkawa, K
Hommel, D
机构
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
[2] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
关键词
D O I
10.1063/1.368982
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a novel experimental setup using a miniature integrating sphere fitted into a cryostat to measure spectrally resolved the absolute external photoluminescence quantum efficiency eta(lum) in the temperature range from 6 K to beyond room temperature. Direct access to eta(lum) is achieved by an uncomplicated method to calibrate the spatially integrated emission spectra absolutely. The fraction of light coupled out of the sphere into the detection system is in good approximation independent of the emitted wavelength and the emission characteristics of the investigated samples, due to their smallness compared with the total sphere area. This fact is proved by theoretical calculations for the sphere throughput and the irradiance within the sphere. To demonstrate the capabilities of this setup, we investigate in high quality ZnSe/ZnMgSSe 10x multiple quantum wells, the temperature dependence of the quantum efficiency, simultaneously for the quantum well and the barrier luminescence. Within a thermal activation model, three processes are found to contribute to the thermal quenching of eta(lum) of the quantum well luminescence. (C) 1998 American Institute of Physics. [S0021-8979(98)03524-5].
引用
收藏
页码:6871 / 6876
页数:6
相关论文
共 50 条
  • [1] Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells
    Chang, CW
    Yang, HC
    Chen, CH
    Chang, HJ
    Chen, YF
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3725 - 3729
  • [2] Radiative recombination in ZnMgSSe/ZnSSe/ZnSe multiple quantum wells
    Gurskii, AL
    Lutsenko, EV
    Yuvchenko, VN
    Yablonskii, GP
    Hamadeh, H
    Sollner, J
    Kalisch, H
    Heuken, M
    PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEW AND SHORT NOTES TO NANOMEETING '97, 1997, : 98 - 101
  • [3] Absolute external luminescence quantum efficiency of GaAs/Al0.3Ga0.7As multiple quantum wells
    Fleck, T
    Schmidt, M
    Klingshirn, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 198 (01): : 248 - 254
  • [4] Characterization of ZnMgSSe/ZnSe quantum wells grown by MOVPE
    Hamadeh, H
    Lunenburger, M
    Kalisch, H
    Heuken, M
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 867 - 871
  • [5] Ultrafast relaxation of photoexcited carriers in ZnSe/ZnMgSSe multiple-quantum wells
    Nakamura, A
    Mukai, T
    Manabe, Y
    Tanahashi, I
    JOURNAL OF LUMINESCENCE, 1998, 76-7 : 120 - 124
  • [6] Excitonic interactions with intense terahertz pulses in ZnSe/ZnMgSSe multiple quantum wells
    Hirori, Hideki
    Nagai, Masaya
    Tanaka, Koichiro
    PHYSICAL REVIEW B, 2010, 81 (08):
  • [7] Nonperturbative Excitonic Interaction with Intense THz Pulses in ZnSe/ZnMgSSe Multiple Quantum Wells
    Hirori, H.
    Nagai, M.
    Tanaka, K.
    2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), 2010,
  • [8] Exciton localization effect on stimulated emission in ZnSe:Te/ZnMgSSe multiple quantum wells
    Abe, T
    Shirai, T
    Yamada, H
    Kuroda, S
    Itano, N
    Lee, HC
    Kasada, H
    Ando, K
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1581 - 1582
  • [9] Absolute external luminescence quantum efficiency of zinc oxide
    Hauser, Mario
    Hepting, Alexander
    Hauschild, Robert
    Zhou, Huijuan
    Fallert, Johannes
    Kalt, Heinz
    Klingshirn, Claus
    APPLIED PHYSICS LETTERS, 2008, 92 (21)
  • [10] The exciton luminescence in Zn(Cd)Se/ZnMgSSe quantum wells
    Adiyatullin, A. F.
    Krivobok, V. S.
    Onishchenko, E. E.
    JOURNAL OF RUSSIAN LASER RESEARCH, 2012, 33 (03) : 231 - 239