Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich Al2O3/p-Si Diodes

被引：4

作者：

Liu, Zhen ^{[1
]}

Chen, T. P. ^{[1
]}

Liu, Yang ^{[2
]}

Cen, Zhan Hong ^{[1
]}

Zhu, Shu ^{[1
]}

Yang, Ming ^{[1
]}

Wong, Jen It ^{[1
]}

Li, Yi Bin ^{[3
]}

Zhang, Sam ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Harbin Inst Technol, Sch Astronaut, Harbin 150080, Peoples R China

[4] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Aluminum-rich aluminum oxide; annealing effect; capacitance-voltage characteristics; current-voltage characteristics; diode memory; metal-insulator-semiconductor (MIS) diodes; FILMS; LAYER; SI;

D O I：

10.1109/TED.2010.2089461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-rich Al2O3 thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500 degrees C for different durations to form Al/Al-rich Al2O3/p-Si diodes. The annealing causes reactions at the Al-rich Al2O3/Si interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capacitance-voltage (C-V) characteristics. The anomalous behaviors can be eliminated by reconstructing the C-V curve based on a four-element circuit model. The resistance of the Al-rich Al2O3 layer extracted from the C-V reconstruction shows power-law voltage dependence correlated with the current-conduction measurement.

引用

页码：33 / 38

页数：6

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