Silicon carbide hollow nanospheres, nanowires and coaxial nanowires

被引：119
作者：
Shen, GZ
Chen, D
Tang, KB [1 ]
Qian, YT
Zhang, SY
机构：
[1] Univ Sci & Technol China, Dept Chem, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2003年 / 375卷 / 1-2期
关键词：
D O I：
10.1016/S0009-2614(03)00877-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The synthesis and characterization of hollow nanospheres, nanowires and coaxial nanowires of cubic phase silicon carbide (beta-SiC) were reported. The reaction between SiCl4 (or Si powders), C6Cl6 and sodium was used to prepare SiC nanostructures at different temperature. The samples were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), electron diffraction (ED), high-resolution transmission electron microscopy (HRTEM), Raman, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) procedures. Studies found that temperature and reagents were key factors for the samples' morphologies. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码：177 / 184
页数：8
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