Fast Statistical Analysis of Rare Failure Events With Truncated Normal Distribution in High-Dimensional Variation Space

被引:7
作者
Gao, Zhengqi [1 ]
Tao, Jun [1 ]
Su, Yangfeng [2 ]
Zhou, Dian [3 ]
Zeng, Xuan [1 ]
Li, Xin [4 ]
机构
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Fudan Univ, Sch Math Sci, Shanghai 200433, Peoples R China
[3] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA
[4] Duke Kunshan Univ, Data Sci Res Ctr, Suzhou 215316, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Gaussian distribution; Probability density function; Analytical models; Random variables; Random access memory; Threshold voltage; Predictive models; Failure rate; truncated normal distribution;
D O I
10.1109/TCAD.2021.3068107
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this article, to accurately estimate the rare failure rates for large-scale circuits (e.g., SRAM) where process variations are modeled as truncated normal distributions in high-dimensional space, we propose a novel truncated scaled-sigma sampling (T-SSS) method. Similar to scaled-sigma sampling (SSS), T-SSS distorts the truncated normal distributions by a scaling factor, resulting in an analytical model for failure rate estimation. By drawing random samples from the distorted distribution and estimating a sequence of scaled failure rates, we can solve all unknown model coefficients and predict the original failure rate by extrapolation. The accuracy of T-SSS is further assessed by estimating its confidence interval (CI) based on resampling. Our numerical results demonstrate that the proposed T-SSS method can achieve superior accuracy over the state-of-the-art method without increasing the computational cost.
引用
收藏
页码:789 / 793
页数:5
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