Studying the mechanism of ordered growth of InAs quantum dots on GaAs/InP

被引：0
|
作者：
Yin, JZ [1 ]
Wang, XQ [1 ]
Yin, ZY [1 ]
Li, MT [1 ]
Li, ZT [1 ]
Du, GT [1 ]
Yang, SR [1 ]
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2001年 / 33卷 / 07期
基金：
中国国家自然科学基金;
关键词：
self-assembled quantum dots; ordered growth; tensile strained;
D O I：
10.1016/S0030-3992(01)00070-6
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control lnAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6 x 10(10) cm(-2) at 4 monolayers InAs layer. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：507 / 509
页数：3
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