Fabrication of sub-10 nm gap arrays over large areas for plasmonic sensors

被引：77

作者：

Siegfried, T. ^{[1
]}

Ekinci, Y. ^{[1
,2
]}

Solak, H. H. ^{[3
]}

Martin, O. J. F. ^{[4
]}

Sigg, H. ^{[1
]}

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] ETH, Dept Mat, Lab Met Phys & Technol, CH-8093 Zurich, Switzerland

[3] Eulitha AG, CH-5232 Villigen, Switzerland

[4] Ecole Polytech Fed Lausanne, Nanophoton & Metrol Lab, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

evaporation; nanofabrication; nanolithography; nanostructured materials; numerical analysis; plasmonics; surface enhanced Raman scattering; LITHOGRAPHY; NANOSTRUCTURES;

D O I：

10.1063/1.3672045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a high-throughput method for the fabrication of metallic nanogap arrays with high-accuracy over large areas. This method, based on shadow evaporation and interference lithography, achieves sub-10 nm gap sizes with a high accuracy of +/- 1.5 nm. Controlled fabrication is demonstrated over mm(2) areas and for periods of 250 nm. Experiments complemented with numerical simulations indicate that the formation of nanogaps is a robust, self-limiting process that can be applied to wafer-scale substrates. Surface-enhanced Raman scattering (SERS) experiments illustrate the potential for plasmonic sensing with an exceptionally low standard-deviation of the SERS signal below 3% and average enhancement factors exceeding 1 x 10(6). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672045]

引用

页数：3

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