New n-type TiO2 transparent active channel TFTs fabricated with a solution process

被引：27

作者：

Park, Jae-Woo ^{[1
]}

Yoo, Seunghyup ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期

关键词：

dielectric films; field-effect transistors (FETs); metal-oxide-semiconductors; thin-film transistor (TFT); titanium dioxide (TiO2); transparent TFTs;

D O I：

10.1109/LED.2008.2000608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New metal-oxide thin-film transistors (MOxTFTs) with a solution-processed TiO2 transparent active channel are fabricated with a novel doping process that consists of a deposition of an ultrathin Ti layer on TiO2 films and a brief rapid thermal annealing. Contrary to an as-prepared device which does not show any appreciable TFT actions, devices with the proposed process exhibit a clear n-type TFT behavior with a saturation mobility of 0.12 cm(2) . V-1 . s(-1) and a threshold voltage of 11 V. A solution processibility and a low-cost manufacturability of TiO2 make the presented TFTs potentially attractive for cost-sensitive applications.

引用

页码：724 / 727

页数：4

共 15 条

[1]

BHATTACHARYA P, 1994, SEMICONDUCTOR OPTOEL, P127

[2] MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].

Campbell, SA ;

Gilmer, DC ;

Wang, XC ;

Hsieh, MT ;

Kim, HS ;

Gladfelter, WL ;

Yan, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109

[3]

Hong GD, 2006, INT J CONTROL AUTOM, V4, P1

[4] AN ANALYTICAL MODEL FOR ORGANIC-BASED THIN-FILM TRANSISTORS [J].

HOROWITZ, G ;

DELANNOY, P .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :469-475

[5] Conductivity in transparent anatase TiO2 films epitaxially grown by reactive sputtering deposition [J].

Jeong, BS ;

Norton, DP ;

Budai, JD .

SOLID-STATE ELECTRONICS, 2003, 47 (12) :2275-2278

[6]

JUERGEN HB, 1992, PROG ORG COAT, V20, P105

[7]

KATAYAMA M, 2006, APPL PHYS LETT, V89

[8] PHOTOCATALYSIS ON TIO2 SURFACES - PRINCIPLES, MECHANISMS, AND SELECTED RESULTS [J].

LINSEBIGLER, AL ;

LU, GQ ;

YATES, JT .

CHEMICAL REVIEWS, 1995, 95 (03) :735-758

[9] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[10] A LOW-COST, HIGH-EFFICIENCY SOLAR-CELL BASED ON DYE-SENSITIZED COLLOIDAL TIO2 FILMS [J].

OREGAN, B ;

GRATZEL, M .

NATURE, 1991, 353 (6346) :737-740

← 1 2 →