Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

被引：48

作者：

O'Connor, Eamon ^{[1
,4
]}

Halter, Mattia ^{[1
,2
]}

Eltes, Felix ^{[1
]}

Sousa, Marilyne ^{[1
]}

Kellock, Andrew ^{[3
]}

Abel, Stefan ^{[1
]}

Fompeyrine, Jean ^{[1
]}

机构：

[1] IIBM Res GmbH, Zurich Res Lab, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

[2] Swiss Fed Inst Technol Zurich, Integrated Syst Lab, CH-8092 Zurich, Switzerland

[3] IBM Almaden Res Ctr, 650 Harry Rd, San Jose, CA 95120 USA

[4] Ecole Polytech Fed Lausanne, Lausanne, Switzerland

来源：

APL MATERIALS | 2018年 / 6卷 / 12期

基金：

欧盟地平线“2020”;

关键词：

FIELD-CYCLING BEHAVIOR; OPTICAL-PROPERTIES;

D O I：

10.1063/1.5060676

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the stabilization of ferroelectric HfxZr1-xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 degrees C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 degrees C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (P-r) of similar to 21 mu C/cm(2) and a coercive field (E-c) of similar to 1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films. (C) 2018 Author(s).

引用

页数：7

共 29 条

[1] A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction [J].

Ambriz-Vargas, Fabian ;

Kolhatkar, Gitanjali ;

Broyer, Maxime ;

Hadj-Youssef, Azza ;

Nouar, Rafik ;

Sarkissian, Andranik ;

Thomas, Reji ;

Gomez-Yanez, Carlos ;

Gauthier, Marc A. ;

Ruediger, Andreas .

ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (15) :13262-13268

[2] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[3] ELECTRICAL AFTEREFFECTS IN PB(TI,ZR)O3 CERAMICS [J].

CARL, K ;

HARDTL, KH .

FERROELECTRICS, 1978, 17 (3-4) :473-486

[4] Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations [J].

Chouprik, Anastasia ;

Zakharchenko, Sergey ;

Spiridonov, Maxim ;

Zarubin, Sergei ;

Chernikova, Anna ;

Kirtaev, Roman ;

Buragohain, Pratyush ;

Gruverman, Alexei ;

Zenkevich, Andrei ;

Negrov, Dmitrii .

ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (10) :8818-8826

[5] Heat transport analysis for flash lamp annealing [J].

Habuka, Hiroshi ;

Hara, Akiko ;

Karasawa, Takeshi ;

Yoshioka, Masaki .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3A) :937-942

[6] A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement [J].

Kim, Han Joon ;

Park, Min Hyuk ;

Kim, Yu Jin ;

Lee, Young Hwan ;

Moon, Taehwan ;

Do Kim, Keum ;

Hyun, Seung Dam ;

Hwang, Cheol Seong .

NANOSCALE, 2016, 8 (03) :1383-1389

[7] TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films [J].

Lomenzo, Patrick D. ;

Takmeel, Qanit ;

Zhou, Chuanzhen ;

Fancher, Chris M. ;

Lambers, Eric ;

Rudawski, Nicholas G. ;

Jones, Jacob L. ;

Moghaddam, Saeed ;

Nishida, Toshikazu .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (13)

[8] Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects [J].

Mueller, J. ;

Polakowski, P. ;

Mueller, S. ;

Mikolajick, T. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (05) :N30-N35

[9] Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications [J].

Mueller, J. ;

Boescke, T. S. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. ;

Sundqvist, J. ;

Kuecher, P. ;

Mikolajick, T. ;

Frey, L. .

APPLIED PHYSICS LETTERS, 2011, 99 (11)

[10] Ferroelectricity in Simple Binary ZrO2 and HfO2 [J].

Mueller, Johannes ;

Boescke, Tim S. ;

Schroeder, Uwe ;

Mueller, Stefan ;

Braeuhaus, Dennis ;

Boettger, Ulrich ;

Frey, Lothar ;

Mikolajick, Thomas .

NANO LETTERS, 2012, 12 (08) :4318-4323

← 1 2 3 →