Synthesis and oxidation of luminescent silicon nanocrystals from silicon tetrachloride by very high frequency nonthermal plasma

被引:81
作者
Gresback, Ryan [1 ]
Nozaki, Tomohiro [1 ]
Okazaki, Ken [1 ]
机构
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Mech & Control Engn, Meguro Ku, Tokyo 1528552, Japan
关键词
GERMANIUM; PHOTOLUMINESCENCE; GROWTH; NANOPARTICLES; CHLORINATION; FABRICATION; DEPOSITION; CHEMISTRY; MECHANISM; EMISSION;
D O I
10.1088/0957-4484/22/30/305605
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon nanocrystals have recently attracted significant attention for applications in electronics, optoelectronics, and biological imaging due to their size-dependent optical and electronic properties. Here a method for synthesizing luminescent silicon nanocrystals from silicon tetrachloride with a nonthermal plasma is described. Silicon nanocrystals with mean diameters of 3-15 nm are synthesized and have a narrow size distribution with the standard deviation being less than 20% of the mean size. Control over crystallinity is achieved for plasma pressures of 1-12 Torr and hydrogen gas concentrations of 5-70% through adjustment of the plasma power. The size of nanocrystals, and resulting optical properties, is mainly dependent on the gas residence time in the plasma region. Additionally the surface of the nanocrystals is covered by both hydrogen and chlorine. Oxidation of the nanocrystals, which is found to follow the Cabrera-Mott mechanism under ambient conditions, is significantly faster than hydrogen terminated silicon due to partial termination of the nanocrystal surface by chlorine.
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页数:7
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