The influence of various upper electrodes on fatigue properties of perovskite Pb(Zr,Ti)O3 thin films

被引:24
|
作者
Masuda, Y [1 ]
Nozaka, T [1 ]
机构
[1] Hachinohe Inst Technol, Fac Engn, Dept Elect Intelligence Syst, Hachinohe, Aomori 0318501, Japan
关键词
ferroelectric thin film; chemical solution deposition; leakage current density; domain pinning; FeRAM; MEMS; fatigue; degradation; polarization switching; upper electrodes of platinum(Pt); SrRuO3 (SRO) and IrO2;
D O I
10.1143/JJAP.42.5941
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric thin films of Pb(Zr,Ti)O-3 (PZT) were prepared by chemical solution deposition (CSD). The top electrodes of platinum (Pt), SrRuO3 (SRO), and IrO2 thin films are deposited on the PZT thin films by RF magnetron sputtering (RF) and the pulsed laser deposition (PLD) methods, respectively. The polarization fatigue of ferroelectric thin-film capacitors is investigated. As a result, the remanent polarization value of the PZT thin films of SRO/PZT/PT/Pt/TiOx/SiO2/Si and IrO2/ PZT/PT/Pt/TiOx/SiO2/Si remains more than 10(11) switching cycles at constant value and the value of the PZT thin films of Pt/PZT/PT/Pt/TiOx/SiO2/Si decreases to approximately 50% of its initial value at 10(8) cycles. It is confirmed that polarization fatigue is improved using SRO and IrO2 thin-film electrodes as top electrodes.
引用
收藏
页码:5941 / 5946
页数:6
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