Preparation and Characterization of CuInSe2 Thin Films Derived by Electrodeposition Process for Solar Cells

CuInSe2 thin films for solar cells are deposited on indium tin oxide conductive glass substrates by one step electrodeposition process in a three-electrode system. The structural, compositional, and morphological properties of the deposited CuInSe2 thin films are then characterized by X-ray diffraction analysis, X-ray photoelectron spectroscopy, and scanning electron microscopy. Results indicate that the CuInSe2 thin films with smooth, homogeneous, and polycrystalline can be easily obtained. The atomic ratio of Cu, In, and Se of the CuInSe2 thin films is 1.00:1.14:2.45 after annealing in a vacuum tubular furnace, and the thickness of the CuInSe2 thin films is measured in a range between 1m and 1.6 m, which meets the requirement for fabricating tandem solar cells.