On-wafer noise characterization of low-noise amplifiers in the Ka-band

被引:4
作者
Long, S [1 ]
Escotte, L
Graffeuil, J
Brasseau, F
Cazaux, JL
机构
[1] Univ Toulouse 3, CNRS, LAAS, F-31062 Toulouse, France
[2] Alcatel Space, Toulouse, France
关键词
low-noise amplifier (LNA); multiple-impedance technique; noise; noise figure; noise parameters;
D O I
10.1109/TIM.2003.817156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper addresses a new experimental test set designed for on-wafer noise characterization of active two-port amplifiers in the Ka-band. We report on noise parameters obtained from the multiple impedance noise measurement technique on several microwave monolithic integrated circuit (MMIC) low-noise amplifiers. We have also compared it with the traditional method based on the Y-factor technique using conventional equipment. We conclude that. when inserted into a receiver, a low-noise amplifier will usually feature a noise performance worse than specified, but this can he calculated as long as the four noise parameters are known.
引用
收藏
页码:1606 / 1610
页数:5
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