Selectively grown vertical Si-p MOS transistor with short channel lengths

Vertical p-MOS transistors with channel lengths of similar to 130nm have been fabricated using selective LPCVD epitaxy for the definition of the channel region, instead of fine line lithography. Owing to self-aligned facet growth the channel region and the volume diode which limited the parasitic bipolar transistor can be designed more independently. Thus a short-channel p-MOS transistor with a high breakthrough voltage, an ideal subthreshold behaviour and a high transconductance was fabricated.