Temperature dependence of the optical and lattice vibration properties in gallium arsenide

被引：14

作者：

Khan, M. Ajmal ^{[1
]}

Algarni, H. ^{[1
,2
]}

Bouarissa, N. ^{[3
]}

机构：

[1] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha 61413, Saudi Arabia

[2] King Khalid Univ, RCAMS, POB 9004, Abha 61413, Saudi Arabia

[3] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria

来源：

OPTIK | 2019年 / 176卷

关键词：

Temperature; Optical properties; Lattice vibration; GaAs; REFRACTIVE-INDEX; BAND-STRUCTURE; DIELECTRIC-CONSTANTS; PHONON FREQUENCIES; CRYSTAL PROPERTIES; ENERGY-GAP; GAAS; PARAMETERS; PRESSURE; ZNS;

D O I：

10.1016/j.ijleo.2018.09.098

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The temperature dependence of the band gaps, refractive index, high-frequency and static dielectric constants and optical phonon frequencies in GaAs has been computed by using a pseudopotential approach. Our findings for all features of interest at given temperatures yielded values that agree with those previously reported. The variation of the features being studied here versus temperature showed a monotonic behavior. The transverse optical (TO) and longitudinal optical (LO) phonon frequencies are shifted towards low frequencies when the temperature is raised from 0 to 600 K. The change in the LO-TO splittings by raising temperature reflects the change in the ionicity character of the material under investigation.

引用

页码：366 / 371

页数：6

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