Removal of deuterium from co-deposited carbon-silicon layers

被引：6

作者：

Balden, M

Mayer, M

机构：

[1] Max Planck Inst Plasma Phys, EURATOM Assoc, D-85748 Garching, Germany

[2] EURATOM, Forschungszentrum Julich GmbH, Inst Plasma Phys, Trilateral Euregio Cluster, D-52425 Julich, Germany

来源：

JOURNAL OF NUCLEAR MATERIALS | 2000年 / 283卷

关键词：

D O I：

10.1016/S0022-3115(00)00168-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The composition of co;deposited carbon-silicon layers (a-C:Si:D) with varying Si concentrations and their removal by heating in air were investigated using MeV ion beam techniques. The ion-induced release of D due to the analysing beam (1.2 MeV He-3) was determined. The removal rates of D and C by heating in air increase strongly at temperatures around 550 K for a-C:D layers. With increasing Si content, these temperatures rise to above 650 K for layers with Si concentrations larger than 0.2 Si/(Si + C). The C removal rate is always lower than the D removal rate. Si is not removed by this method. The observed properties of the layers are compared with those of hard and soft a-C:D films. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1057 / 1061

页数：5

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