24.4% industrial tunnel oxide passivated contact solar cells with ozone-gas oxidation Nano SiOx and tube PECVD prepared in-situ doped polysilicon

被引:18
作者
Liu, Zunke [1 ,2 ,3 ]
Lin, Na [1 ,3 ,6 ]
Zhang, Qingshan [4 ]
Yang, Bin [5 ]
Xie, Lihua [4 ]
Chen, Yan [5 ]
Li, Wangpeng [4 ]
Liao, Mingdun [1 ,3 ]
Chen, Hui [4 ]
Liu, Wei [1 ,3 ]
Wang, Yuming [4 ]
Huang, Shihua [6 ]
Yan, Baojie [1 ,2 ,3 ]
Zeng, Yuheng [1 ,2 ,3 ,4 ]
Wan, Yimao [5 ]
Ye, Jichun [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Engn Res Ctr Energy Optoelect Mat & Devic, Ningbo 315201, Zhejiang, Peoples R China
[4] subsidiary Co Yingkou Jinchen Machinery Co Ltd, Suzhou Tuosheng Intelligent Equipment Co Ltd, Suzhou 215156, Jiangsu, Peoples R China
[5] Risen Energy Co Ltd, Ningbo 315609, Zhejiang, Peoples R China
[6] Zhejiang Normal Univ, Prov Key Lab Solid State Optoelect Devices, Jinhua 321004, Zhejiang, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Ozone gas oxidation (OGO); Tunnel oxide; Tube PECVD; TOPCon; THERMAL-DECOMPOSITION; EFFICIENCY; QUALITY;
D O I
10.1016/j.solmat.2022.111803
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Ozone-gas oxidation (OGO) technology, capable of integrating into tube plasma-enhanced chemical vapor deposition (PECVD) technology, is developed to prepare the Nano SiOx layer for tunnel oxide passivated contact (TOPCon) solar cells in this work. The effects of gas flow, oxidation temperature, and annealing temperature on passivation quality are investigated. The X-ray photoelectron spectroscopy (XPS) indicates that OGO SiOx possesses a Si4+ proportion of about 20%, higher than the nitric acid oxidized (NAOS) SiOx and plasma-assisted N2O oxidation (PANO) SiOx. The implied open-circuit voltage (iV(oc)) of the hydrogenated lifetime sample is promoted to more than 740 mV with the highest value of 748 mV, corresponding to a lowest single-sided saturation current density (J(0,s)) of 3.1 fA/cm(2). The contact resistivity extracted from the Cox-Strack method is < 9 m omega cm(2) as the annealing temperature is more than 840 ?. Finally, we prepared the large-sized TOPCon solar cells with an average efficiency of 24.37% and a maximum efficiency of 24.41%, respectively. The above work shows that the tube PECVD technology integrated with ozone gas oxidation has the potential for the mass-production TOPCon industry.
引用
收藏
页数:7
相关论文
共 27 条
[1]  
[Anonymous], 2021, 2021 ITRPV
[2]   MECHANISM OF THE GAS PHASE, THERMAL DECOMPOSITION OF OZONE [J].
BENSON, SW ;
AXWORTHY, AE .
JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (06) :1718-1726
[3]   Contact Selectivity and Efficiency in Crystalline Silicon Photovoltaics [J].
Brendel, Rolf ;
Peibst, Robby .
IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (06) :1413-1420
[4]   24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design [J].
Chen, Daming ;
Chen, Yifeng ;
Wang, Zigang ;
Gong, Jian ;
Liu, Chengfa ;
Zou, Yang ;
He, Yu ;
Wang, Yao ;
Yuan, Ling ;
Lin, Wenjie ;
Xia, Rui ;
Yin, Li ;
Zhang, Xueling ;
Xu, Guanchao ;
Yang, Yang ;
Shen, Hui ;
Feng, Zhiqiang ;
Altermatt, Pietro P. ;
Verlinden, Pierre J. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 206
[5]   Mass production of industrial tunnel oxide passivated contacts (i-TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W [J].
Chen, Yifeng ;
Chen, Daming ;
Liu, Chengfa ;
Wang, Zigang ;
Zou, Yang ;
He, Yu ;
Wang, Yao ;
Yuan, Ling ;
Gong, Jian ;
Lin, Wenjie ;
Zhang, Xueling ;
Yang, Yang ;
Shen, Hui ;
Feng, Zhiqiang ;
Altermatt, Pietro P. ;
Verlinden, Pierre J. .
PROGRESS IN PHOTOVOLTAICS, 2019, 27 (10) :827-834
[6]   Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics [J].
Feldmann, Frank ;
Bivour, Martin ;
Reichel, Christian ;
Hermle, Martin ;
Glunz, Stefan W. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 120 :270-274
[7]   Silicon oxidation by ozone [J].
Fink, Christian K. ;
Nakamura, Ken ;
Ichimura, Shingo ;
Jenkins, Stephen J. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (18)
[8]  
Frank F., 2019, 36 EUROPEAN PV SOLAR
[9]   An industrially viable TOPCon structure with both ultra-thin SiOx and n+ - poly-Si processed by PECVD for p-type c-Si solar cells [J].
Gao, Tian ;
Yang, Qing ;
Guo, Xueqi ;
Huang, Yuqing ;
Zhang, Zhi ;
Wang, Zhixue ;
Liao, Mingdun ;
Shou, Chunhui ;
Zeng, Yuheng ;
Yan, Baojie ;
Hou, Guofu ;
Zhang, Xiaodan ;
Zhao, Ying ;
Ye, Jichun .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2019, 200
[10]   Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells [J].
Guo, Xueqi ;
Liao, Mingdun ;
Rui, Zhe ;
Yang, Qing ;
Wang, Zhixue ;
Shou, Chunhui ;
Ding, Waner ;
Luo, Xijia ;
Cao, Yuhong ;
Xu, Jiaping ;
Fu, Liming ;
Zeng, Yuheng ;
Yan, Baojie ;
Ye, Jichun .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 210