Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers

被引：27

作者：

Maximenko, S. I. ^{[1
]}

Freitas, J. A., Jr. ^{[1
]}

Myers-Ward, R. L. ^{[1
]}

Lew, K. -K. ^{[1
]}

VanMil, B. L. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Gaskill, D. K. ^{[1
]}

Muzykov, P. G. ^{[2
]}

Sudarshan, T. S. ^{[2
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 01期

关键词：

BEAM-INDUCED CURRENT; DIFFUSION LENGTH; DEFECTS; SILICON; BULK; GROWTH; BREAKDOWN; EMISSION; LIFETIME;

D O I：

10.1063/1.3448230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local recombination properties of threading screw and edge dislocations in 4H-SiC epitaxial layers have been studied using electron beam induced current (EBIC). The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombination activity. Temperature dependence of EBIC contrast of dislocations suggests that their recombination activity is controlled by deep energy levels in the vicinity of dislocation cores. This paper shows that the type of dislocation (screw or edge) can be identified from analysis of EBIC contrast. (C) 2010 American Institute of Physics. [doi:10.1063/1.3448230]

引用

页数：6

共 37 条

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