High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

被引：6

作者：

Bugge, F ^{[1
]}

Wenzel, H ^{[1
]}

Sumpf, B ^{[1
]}

Erbert, G ^{[1
]}

Weyers, M ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hoschstsfrequentztech, D-124989 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 06期

关键词：

epitaxial growth; laser reliability; quantum well (QW) lasers; semiconductor lasers;

D O I：

10.1109/LPT.2005.846927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With very thick waveguide layers, more than 95% of the output power is enclosed in an angle smaller than 35 degrees. This allows the use of fast axis collimators with a small numerical aperture. Broad area laser diodes with 100-mu m stripe width, an optimized doping profile, and a double QW emit more than 12 W and show reliable operation at 5 W.

引用

页码：1145 / 1147

页数：3

共 8 条

[1] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[2] Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers [J].

Botez, D .

APPLIED PHYSICS LETTERS, 1999, 74 (21) :3102-3104

[3] Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications [J].

Bugge, F ;

Zeimer, U ;

Wenzel, H ;

Erbert, G ;

Weyers, M .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :531-537

[4] 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells [J].

Bugge, F ;

Erbert, G ;

Fricke, J ;

Gramlich, S ;

Staske, R ;

Wenzel, H ;

Zeimer, U ;

Weyers, M .

APPLIED PHYSICS LETTERS, 2001, 79 (13) :1965-1967

[5] Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers [J].

Kondo, T ;

Schlenker, D ;

Miyamoto, T ;

Chen, ZB ;

Kawaguchi, M ;

Gouardes, E ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (2A) :467-471

[6] Improved-performance, InGaAs/InGaAsP (λ=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping [J].

Lee, JJ ;

Mawst, LJ ;

Botez, D .

ELECTRONICS LETTERS, 2003, 39 (17) :1250-1252

[7]

RESSEL P, 2003, EUROPHYSICS C ABSTR

[8] THE EFFECTS OF THE GROWTH TEMPERATURE ON ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.37) LED MATERIALS GROWN BY OM-VPE [J].

TSAI, MJ ;

TASHIMA, MM ;

MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) :437-446

← 1 →