Output power saturation in InAs/GaAs quantum dot lasers

被引：5

作者：

Wasiak, M ^{[1
]}

Bugajski, M ^{[1
]}

Sarzala, RP ^{[1
]}

Mackowiak, P ^{[1
]}

Czyszanowski, T ^{[1
]}

Nakwaski, W ^{[1
]}

机构：

[1] Tech Univ Lodz, Inst Phys, PL-93005 Lodz, Poland

来源：

2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS | 2003年

关键词：

D O I：

10.1002/pssc.200303091

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An attempt has been made to understand the lasing properties of self-assembled InAs/GaAs quantum dots and to describe saturation effects in quantum dot level populations. The new, improved rate equation model has been developed. The impact of carrier relaxation and level depopulation inside quantum dots on lasing properties, in particular on gain depressing and output power saturation, is discussed.

引用

页码：1351 / 1354

页数：4

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