Fluorination and electrical conductivity of BN nanotubes

被引：223

作者：

Tang, CC

Bando, Y

Huang, Y

Yue, SL

Gu, CZ

Xu, FF

Golberg, D

机构：

[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2005年 / 127卷 / 18期

关键词：

D O I：

10.1021/ja042388u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Fluorination of BN nanotubes has been performed using a catalytic growth method, which leads to the appearance of markedly curved fluorine-doped BN sheets and converts originally insulating BN nanotubes to semiconductors, as confirmed by the comparative electron transport four-probe measurements on doped and undoped individual BN nanotubes. Copyright © 2005 American Chemical Society.

引用

收藏

页码：6552 / 6553

页数：2

相关论文

共 17 条

[1] STABILITY AND BAND-GAP CONSTANCY OF BORON-NITRIDE NANOTUBES [J].

BLASE, X ;

RUBIO, A ;

LOUIE, SG ;

COHEN, ML .

EUROPHYSICS LETTERS, 1994, 28 (05) :335-340

[2] Theory of composite BxCyNz nanotube heterojunctions [J].

Blase, X ;

Charlier, JC ;

DeVita, A ;

Car, R .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :197-199

[3] BORON-NITRIDE NANOTUBES [J].

CHOPRA, NG ;

LUYKEN, RJ ;

CHERREY, K ;

CRESPI, VH ;

COHEN, ML ;

LOUIE, SG ;

ZETTL, A .

SCIENCE, 1995, 269 (5226) :966-967

[4] In situ band gap engineering of carbon nanotubes [J].

Crespi, VH ;

Cohen, ML ;

Rubio, A .

PHYSICAL REVIEW LETTERS, 1997, 79 (11) :2093-2096

[5] Boron nitride nanotubes and nanowires [J].

Deepak, FL ;

Vinod, CP ;

Mukhopadhyay, K ;

Govindaraj, A ;

Rao, CNR .

CHEMICAL PHYSICS LETTERS, 2002, 353 (5-6) :345-352

[6]

Golberg D, 1997, CHEM PHYS LETT, V279, P191, DOI 10.1016/S0009-2614(97)00962-7

[7] Functionalized boron nitride nanotubes with a stannic oxide coating: A novel chemical route to full coverage [J].

Han, WQ ;

Zettl, A .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (08) :2062-2063

[8] Boron nitride nanotubes with reduced numbers of layers synthesized by arc discharge [J].

Loiseau, A ;

Willaime, F ;

Demoncy, N ;

Hug, G ;

Pascard, H .

PHYSICAL REVIEW LETTERS, 1996, 76 (25) :4737-4740

[9] Packing C60 in boron nitride nanotubes [J].

Mickelson, W ;

Aloni, S ;

Han, WQ ;

Cumings, J ;

Zettl, A .

SCIENCE, 2003, 300 (5618) :467-469

[10]

Pouchert C.J., 1985, ALDRICH LIB FT IR SP