Integration of LaLuO3 (κ ∼ 30) as High-κ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

被引：31

作者：

Oezben, E. Durgun ^{[1
]}

Lopes, J. M. J. ^{[1
]}

Nichau, A. ^{[1
]}

Schnee, M. ^{[1
]}

Lenk, S. ^{[1
]}

Besmehn, A. ^{[2
]}

Bourdelle, K. K. ^{[3
]}

Zhao, Q. T. ^{[1
]}

Schubert, J. ^{[1
]}

Mantl, S. ^{[1
]}

机构：

[1] Forschungszentrum Julich, JARA FIT, Inst Bio & Nanosyst IBN1 IT, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Cent Div Analyt Chem ZCH, D-52425 Julich, Germany

[3] SOITEC, F-38190 Bernin, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 01期

关键词：

High-kappa; LaLuO3; mobility; replacement gate; silicon-on-insulator (SOI); strained Si; HIGH-K;

D O I：

10.1109/LED.2010.2089423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The integration of lanthanum lutetium oxide (LaLuO3) with a kappa value of 30 is, for the first time, demonstrated on strained and unstrained SOI n/p-MOSFETs as a gate dielectric with a full replacement gate process. The LaLuO3/Si interface showed a very thin silicate/SiO2 interlayer with a D-it level of 4.5 x 10(11) (eV . cm(2))(-1). Fully depleted n/p-MOSFETs with LaLuO3/TiN gate stacks indicated very good performance with steep subthreshold slopes of similar to 70 mV/dec and high I-on/I-off ratios. In addition, strained SOI shows enhanced electron mobilities with a factor of 1.7 compared to SOI. Both electron and hole mobilities for LaLuO3 on SOI are similar to the mobilities in reported Hf-based high-kappa devices.

引用

页码：15 / 17

页数：3

共 12 条

[1] LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process
Nichau, A.
Oezben, E. Durgun
Schnee, M.
Lopes, J. M. J.
Besmehn, A.
Luysberg, M.
Knoll, L.
Habicht, S.
Mussmann, V.
Luptak, R.
Lenk, St.
Rubio-Zuazo, J.
Castro, G. R.
Buca, D.
Zhao, Q. T.
Schubert, J.
Mantl, S.
SOLID-STATE ELECTRONICS, 2012, 71 : 19 - 24
[2] AlGaN/GaN MISHEMTs With High-κ LaLuO3 Gate Dielectric
Yang, Shu
Huang, Sen
Chen, Hongwei
Zhou, Chunhua
Zhou, Qi
Schnee, Michael
Zhao, Qing-Tai
Schubert, Juergen
Chen, Kevin J.
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 979 - 981
[3] Hexagonal LaLuO3 as high-κ dielectric
Schaefer, Anna
Wendt, Fabian
Mantl, Siegfried
Hardtdegen, Hilde
Mikulics, Martin
Schubert, Juergen
Luysberg, Martina
Besmehn, Astrid
Niu, Gang
Schroeder, Thomas
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (01):
[4] Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
Gomeniuk, Y. Y.
Gomeniuk, Y. V.
Nazarov, A. N.
Hurley, P. K.
Cherkaoui, K.
Monaghan, S.
Hellstrom, P. -E.
Gottlob, H. D. B.
Schubert, J.
Lopes, J. M. J.
NANOSCALED SEMICONDUCTOR-ON-INSULATOR MATERIALS, SENSORS AND DEVICES, 2011, 276 : 87 - +
[5] LaLuO3 as a high-k gate dielectric for InAs nanowire structures
Volk, C.
Schubert, J.
Schnee, M.
Weis, K.
Akabori, M.
Sladek, K.
Hardtdegen, H.
Schaepers, Th
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (08)
[6] Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO3 Gate Dielectric
Yu Wen-Jie
Zhang Bo
Liu Chang
Xue Zhong-Ying
Chen Ming
Zhao Qing-Tai
CHINESE PHYSICS LETTERS, 2014, 31 (01)
[7] Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI
Ozben, E. Durgun
Nichau, A.
Lopes, J. M. J.
Lenk, S.
Besmehn, A.
Bourdelle, K. K.
Zhao, Q. T.
Schubert, J.
Mantl, S.
PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8, 2010, 33 (03): : 195 - 202
[8] Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
冯锦锋
刘畅
俞文杰
彭颖红
Chinese Physics Letters, 2016, 33 (05) : 112 - 114
[9] Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors
Feng, Jin-Feng
Liu, Chang
Yu, Wen-Jie
Peng, Ying-Hong
CHINESE PHYSICS LETTERS, 2016, 33 (05)
[10] High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States
Hudait, Mantu K.
Clavel, Michael B.
Karthikeyan, Sengunthar
Bodnar, Robert J.
ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (09) : 4792 - 4804

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